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研究了球型半导体量子点中的电子拉曼散射.讨论了初态为导带全满,价带全空时的电子跃迁过程,给出了电子拉曼散射的跃迁选择定则。通过计算GaAs和CdS材料球型量子点中电子及空穴参与拉曼散射的微分散射截面,分别比较了电子和空穴的不同影响,发现电子对拉曼散射的贡献要远大于空穴的贡献;当选取不同量子点半径时,拉曼散射微分散射截面变化也非常明显;量子点尺寸不变的条件下,改变入射光子能量,可以发现,微分散射截面随入射光子能量增大而减小。
The electron Raman scattering in a spherical semiconductor quantum dot is studied, and the transition from the initial state to the full conduction band and the full valence band are discussed. The transition selection rules for electron Raman scattering are given. By calculating the differential scattering cross sections of electron and hole in Raman scattering of the spherical quantum dots of GaAs and CdS materials, the different effects of electrons and holes are compared respectively. It is found that the contribution of electron to Raman scattering is much larger than the contribution of holes ; When the radius of different quantum dots is chosen, the differential scattering cross sections of Raman scattering are also very obvious. When the size of quantum dots is constant, the energy of incident photons is changed, and the differential scattering cross section decreases with the incident photon energy.