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本文概述了多孔硅形成机理和现有模型。通过观察和分析多晶多孔硅化学腐蚀机理提出了一个新模型:多孔硅形成机理的逆结晶学模型。这个模型指出多晶多孔硅均匀形貌具有自选择性,而此自选择性受结晶学原理控制。此模型的提出对研究晶体生长有用。
This article outlines the formation mechanism of porous silicon and the existing model. A new model was proposed by observing and analyzing the chemical corrosion mechanism of polycrystalline porous silicon: an inverse crystallographic model of the formation mechanism of porous silicon. This model states that the homogeneous morphology of polycrystalline porous silicon is self-selective and that this self-selectivity is governed by the principles of crystallography. The proposed model is useful for studying crystal growth.