论文部分内容阅读
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。该器件采用掺砷多晶硅发射极，同时具备有覆盖和树枝状两种图形结构的优点。器件引入扩散电阻和分布式多晶硅电阻组合而成的发射极复合镇流电阻，实现对发射极电流二次镇流，器件表现出良好的微波性能和高的可靠性。经内匹配，在L波段脉冲输出大于100W（36V），脉宽150μs，工作比10％，增益大于7．5dB，效率大于45％，器件最大输出达150W（42V）。
A bipolar microwave power transistor named polysilicon capping structure was designed. The device uses arsenic-doped polysilicon emitter, at the same time have the advantages of both the cover and dendritic two graphic structures. The device introduces a recombination ballast resistor with diffused resistor and distributed polysilicon resistor to achieve secondary ballasting of the emitter current. The device shows good microwave performance and high reliability. The internal matching, the L-band pulse output is greater than 100W (36V), pulse width 150μs, than 10% of work, gain greater than 7.5dB, efficiency greater than 45%, the maximum output of the device up to 150W (42V).