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采用直流磁控溅射方法,制备出沉积在不同温度衬底上的NiTi薄膜.应用X射线衍射、小角X射线散射和差热扫描量热法研究了两种衬底温度(室温和573K)溅射的NiTi合金薄膜晶化温度和在763K退火1h的晶化程度.
NiTi thin films deposited on different temperature substrates were prepared by direct current magnetron sputtering.The effects of substrate temperature (room temperature and 573K) sputtering were studied by X-ray diffraction, small-angle X-ray scattering and differential scanning calorimetry Shot NiTi alloy thin film crystallization temperature and annealing at 763K 1h degree of crystallization.