由于砷的固溶度较高,可获得较高的表面浓度,其扩散系数小适应于V-MOS的源区扩散,为栅氧化的温度选择创造了一个有利的条件.以往由于砷有剧毒,给实际应用带来一定的困难,故一直未被采用.但采用掺砷二氧化硅乳胶源做为扩散源,这种乳胶源能最大限度的控制有毒物质的析出量,减少了对环境的污染,保证了工作人员的安全,为人们的应用开辟了一个可行的途径.现将二氧化硅乳胶源的扩散过程作一简介. Due to the high solid solubility of arsenic, a higher surface concentration can be obtained, and the small diffusion coefficient is suitable for the source region diffusion of the V-MOS, thus creating a favorable condition for the temperature selection of the gate oxidation. , To some practical difficulties, it has not been used.But the use of arsenic-doped silica latex source as a diffusion source, this latex source can maximize the control of the amount of toxic substances precipitated, reducing the environmental Pollution, to ensure the safety of staff, opened up a practical way for people's application.This will now make a brief introduction of the silica latex source diffusion process.