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采用射频磁控溅射法,以HfO2陶瓷作为靶材,在石英衬底上制备了HfO2薄膜。通过椭圆偏振光谱仪(SE)、X射线衍射(XRD)、场发射扫描电子显微镜(FE-SEM)研究了不同O2/Ar气体流量比对薄膜沉积速率、结构、形貌等的影响。结果表明,随着O2/Ar气体流量比从0增加到0.50,薄膜的沉积速率逐渐下降。O2/Ar气体流量比为0时制备的薄膜沿[001]方向择优取向生长,具有较高的结晶程度,较大的晶粒尺寸和柱状晶形貌。O2/Ar气体流量比不为0时制备的薄膜没有出现择优生长,结晶程度较低,晶粒尺寸较小,具有球形颗粒状形貌。随着O2/Ar气体流量比从0.25增加到0.50,薄膜的晶粒尺寸有所增大,形貌变化不大。最后探讨了O2/Ar气体流量比为0时制备HfO2薄膜择优取向生长的机理。
Using RF magnetron sputtering method to HfO2 ceramic as a target, prepared on the quartz substrate HfO2 film. The effects of different O2 / Ar gas flow rates on the deposition rate, structure and morphology of the films were investigated by ellipsometer (SE), X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) The results show that as the O2 / Ar gas flow rate increases from 0 to 0.50, the deposition rate of the films decreases gradually. The films prepared at O2 / Ar gas flow ratio of 0 have preferred orientation growth along the [001] direction with higher degree of crystallinity, larger grain size and columnar morphology. The film prepared by O2 / Ar gas flow ratio is not 0, there is no preferential growth, the degree of crystallization is lower, the grain size is smaller and the spherical granular morphology is obtained. With the increase of O2 / Ar gas flow rate from 0.25 to 0.50, the grain size of the films increases and the morphology does not change much. Finally, the mechanism of the preferred orientation growth of HfO2 thin films was investigated when the O2 / Ar gas flow ratio was zero.