用悬浮区熔技术生长的无位错硅晶体中产生空位群。研究了晶体生长条件对空位群形成的影响。讨论了一些以成核模型为基础的,在拉制期间消除空位群的方法。用这些方法之一所生长的晶体中将不产生空位群。 Gap generation occurs in dislocation-free silicon grown by suspension zone melting. The effects of crystal growth conditions on the formation of vacancy groups were studied. Some methods based on the nucleation model are discussed to eliminate vacancy groups during drawing. Gaps grown in one of these methods will not generate gaps.