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本文研究了非晶态半导体多层膜a-St:H/a-SiN_x:H结构在低温下(150～250K)的持续光电导效应(PPC),实验表明PPC效应强烈地依赖于曝光时间、强度和温度,并且与外加偏压和a-SiN_x:H的层数有关.这个结果被解释为a-Si:H体内光生电子-空穴对在a-Si:H和a-SiN_x:H界面处电场分离和陷阱效应.
In this paper, the continuous photoconductivity (PPC) of amorphous a-St: H / a-SiN_x: H structure at low temperature (150 ~ 250K) has been studied. The experimental results show that the PPC effect strongly depends on the exposure time, Strength and temperature, and are related to the applied bias voltage and the number of layers of a-SiN_x: H. This result is interpreted as the ratio of photogenerated electron-hole pairs in the a-Si: H body at the a-Si: H and a-SiN_x: H interfaces Electric field separation and trap effect.