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三维3D ES势垒直接影响着层间扩散,在Cu(111)和Cu(100)面2D ES势垒和3D ES势垒是不同的。本文主要研究了基于(1+1)维KMC模型,在这两个特殊的晶面上Cu薄膜的同质外延生长。观察两个面的生长情况,发现随着温度的增加薄膜的粗糙度逐渐减小,由于Cu(111)表面2D ES势垒较小,所以Cu(111)面粗糙度的下降的速度比Cu(100)要快,Cu(111)表面更有利于薄膜的生长。对于纳米棒的应用,在生长时间较短时两个面的生长速率逐渐减小,但是Cu(100)面的生长速度比Cu(111)面更快,随着生长时间的增加,这两个面会出现多层台阶,Cu(111)面的生长速度会逐渐增加,最终会超过了Cu(100)面。多层台阶出现后对两个面的影响是不同的。由于Cu(111)表面3D ES势垒较大,在Cu(111)表面会形成较多的多层台阶,Cu(111)面上多层台阶数有利于纳米棒的生长,然而在Cu(100)表面3D ES势垒较小,Cu(100)表面很难形成多层台阶,所以Cu(100)面上纳米棒的生长速度并没有增加。正是因为3D ES势垒的存在才会导致多层台阶的出现,较大的3D ES势垒有利于纳米棒的生长。
The three-dimensional 3D ES barrier directly affects interlayer diffusion. The 2D ES barrier and the 3D ES barrier are different between the Cu (111) and Cu (100) planes. In this paper, we mainly study the homoepitaxial growth of Cu thin films on these two special crystal planes based on the (1 + 1) -dimensional KMC model. The growth of the two surfaces was observed and found that the roughness of the films decreased with the increase of temperature. Due to the smaller 2D ES barrier on the surface of Cu (111), the roughness of Cu (111) surface decreased faster than that of Cu 100) is faster, Cu (111) surface is more conducive to the growth of the film. For the application of nanorods, the growth rate of two surfaces decreases gradually when the growth time is short, but the growth speed of Cu (100) surface is faster than that of Cu (111) surface. With the growth time increasing, There will be multi-level steps, the growth rate of Cu (111) surface will gradually increase, eventually exceeding the Cu (100) surface. After the appearance of multi-level steps on the two sides of the impact is different. Due to the large 3D ES barrier on the Cu (111) surface, more multi-step steps are formed on the Cu (111) surface. The multi-step number on the Cu (111) ) Surface 3D ESS barrier is small, Cu (100) surface is difficult to form multi-step, so the growth rate of the nanorods on the Cu (100) surface did not increase. It is because of the existence of 3D ES barrier that leads to the emergence of multi-level steps. The larger 3D ES barrier is conducive to the growth of nanorods.