日本罗姆公司与立命馆大学一个合作小组声称,其垂直结构GaN MOSFET可达到比SiC相同器件还要好的性能。该研究小组所研制出的上述晶体管可用于电源开关,其沟道迁移率为133cm2V-1s-1,接通电压5.1V。三个方面的改进使得上述器件性能提高,即:新的设计方案无需注入,通过使用一种SiN/ A team of Japanese Rom companies and Ritsumeikan University claims that its vertically structured GaN MOSFETs achieve even better performance than the same devices on SiC. The research team developed the above transistor can be used for power switch, the channel mobility of 133cm2V-1s-1, the turn-on voltage of 5.1V. Three improvements have led to improved device performance, namely: the new design without injection, through the use of a SiN /