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通过硅 (111)衬底淀积的单层 Co或 Co/ Ti双金属层在不同退火温度的固相反应 ,在硅上形成制备了多晶和外延 Co Si2 薄膜 .用电流 -电压和电容 -电压 (I- V/ C- V)技术在 90 K到室温的温度范围内测量了 Co Si2 / Si肖特基接触特性。用肖特基势垒不均匀模型分析了所测得的 I- V特性 ,在较高温度下 (≥～ 2 0 0 K)或较低温度的较大偏压区域 ,I- V曲线能用热激发和在整个结面积上势垒高度的高斯分布模型描述 .而在较低温度的较小偏压区域 ,电流由流过一些小势垒高度微区的电流决定 ,从而在低温 I- V曲线上在约 10 - 7A处有一个“曲折”.在室温下 ,从 I-V曲线得到的多晶 Co Si2 / Si的势垒高度为约 0 .5 7e V.对外延 Co Si2 ,势垒高度依赖于最后退火温度 ,当退火温度从 70 0℃升到 90 0℃ ,势垒高度从 0 .5 4e V升高到 0 .6 0 e V.
The polycrystalline and epitaxial Co Si2 thin films were formed on silicon by solid-state reaction of single-layer Co or Co / Ti bimetallic layers deposited on silicon (111) substrates at different annealing temperatures. The current-voltage and capacitance- The voltage (I-V / C-V) technique measures Co Si2 / Si Schottky contact characteristics over a temperature range of 90 K to room temperature. The measured I-V characteristics are analyzed using a Schottky barrier inhomogeneous model and the I-V curve can be used at higher bias (≥ ~ 200 K) or in larger bias regions at lower temperatures Thermal excitation, and Gaussian distribution model describing the barrier height over the entire junction area, whereas at lower bias regions where the temperature is lower, the current is determined by the current flowing through some small barrier height micro-regions, The curve has a “zigzag” at about 10 - 7A. The barrier height of the polycrystalline Co Si2 / Si from the IV curve is about 0 .57eV at room temperature. For epitaxial Co Si2, the barrier height is highly dependent At the final annealing temperature, the barrier height increased from 0.54 eV to 0.600 eV as the annealing temperature rose from 70 0 ° C to 90 0 ° C.