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用原子力显微镜研究了在不同的条件下采用固态磷源分子束外延技术生长的InP同质外延薄膜的表面形貌。在样品的表面观察到不稳定三维岛状生长。其主要原因有两种,第一种是生长温度较低时,由于吸附原子受到附加的ES台阶边垒的阻碍作用,使扩散运动不能向台阶下面运动,而在台阶上面形成小丘,第二种是生长温度较高或V/III较低时,因生长中缺磷造成In的堆积而产生。在合适的生长条件下,可获得了光滑的2D层状生长。
The morphology of InP epitaxial films grown by solid state phosphorus source molecular beam epitaxy under different conditions was investigated by atomic force microscopy. Unstable three-dimensional island growth was observed on the surface of the sample. There are two main reasons, the first is the growth temperature is low, because the adsorption of atoms by the additional barriers to the ES step barrier, so that diffusion can not move below the step, and in the step above the formation of hillocks, the second Species are grown at higher temperatures or V / III lower, due to lack of phosphorus in the growth caused by the accumulation of In. Under suitable growth conditions, a smooth 2D lamellar growth is obtained.