最近 RCA 公司宣称制造了一个微小型实验的薄膜晶体管。该晶体管所用的有源材料是硫化镉.这种化合物比锗、硅及其他半导体材料的绝缘性能要强的多。在制造薄膜晶体管时,在蒸发过程中于玻璃板上相继地淀积硫化镉薄层及金属,制成一个厚度仅为万分之几吋的元件。在蒸发过程中,硫化镉晶体及金属在真空中相继地加热,化为蒸气,聚集在玻璃上。在这个过程中,采用特殊的模罩盖住板上某些部分,于是金属层淀积成一定的形状,构成晶体管所需的各种电接触。在性能相仿的普通晶体管中,两个接触端之间的 Recently RCA claimed to have made a tiny experiment of thin-film transistors. The active material used in the transistor is cadmium sulfide, which is much more insulating than germanium, silicon and other semiconductor materials. In the manufacture of thin film transistors, thin layers of cadmium sulfide and metals are successively deposited on the glass plate during evaporation to form an element having a thickness of a few hundredths of an inch. During the evaporation process, the CdS crystals and the metal are successively heated in vacuum to form vapor, which accumulates on the glass. In this process, a special mask is used to cover some part of the board, so that the metal layer is deposited into a shape that forms the various electrical contacts required by the transistor. In the performance of similar ordinary transistors, between the two contacts