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Method of Molecular Beam Epitaxy (MBE) is based on the growth of semiconductor layers by effusion source components evaporation under ultrahigh vacuum (10～11 Torr), so the flow of growth components in space occurs in the molecular beam mode. To ensure UHV and the required purity of the process (besides oil-free pumping system: turbo molecular pumps, ion pumps, cryopumps), cryopanels built into the growth reactor and filled with liquid nitrogen are used. Sources and wafer strong heating, integrated research methods, necessity of precision wafer mechanical movement between chambers in UHV conditions mean the complexity of equipment. As a result, MBE systems are produced only by a few companies in USA and Europe. In Russia, serial production of such equipment begun in 80’s but in mid 90’s was widely discontinued.
Method of Molecular Beam Epitaxy (MBE) is based on the growth of semiconductor layers by effusion source components evaporation under ultrahigh vacuum (10-11 Torr), so the flow of growth components in space occurs in the molecular beam mode. the required purity of the process (besides oil-free pumping system: turbo molecular pumps, ion pumps, cryopumps), cryopanels built into the growth reactor and filled with liquid nitrogen are used. Sources and wafer strong heating, integrated research methods, necessity of precision wafer mechanical movement between chambers in UHV conditions mean the complexity of equipment. As a result, MBE systems are produced only by a number of companies in USA and Europe. In Russia, serial production of such equipment begun in 80’s but in mid 90’s ail discontinued.