半导体器件常见的二极管、三极管及场效应管(FEF)等分立半导体器件的命名方法是根据EIAJ(日本电子机械工业协会)和JIS(日本工业规格)所制定的,但有一部分二极管使用另外的命名方法.一般说来,半导体分立器件的命名方法由五个部分组成,各部分表示方法及物理意义见表5.几种常用三极管外型、管脚排列及用途见图6. Semiconductor devices Common diodes, triodes and FETs (FEF) and other discrete semiconductor device naming method is based on the EIAJ (Japan Electronics and Mechanical Industry Association) and JIS (Japan Industrial Specification), but some of the diodes use a different name Method. In general, the semiconductor discrete device naming method consists of five parts, each part of the method and physical meaning shown in Table 5. Several commonly used transistor appearance, pin arrangement and use shown in Figure 6.