GaAs肖特基势垒梁式引线混频二极管在高频电路中起着日趋重要的作用.用简单的芯片接触代替管壳封装,使其寄生电容和引线电感大为减小,很适用于混合电路.南京电子器件研究所在单管梁式引线混频管的基础上,发展了逆平行结构和T型结构梁 GaAs Schottky Barrier Beam Leaded Mixing Diodes are playing an increasingly important role in high frequency circuits by replacing the package with a simple chip contact, greatly reducing parasitic capacitance and lead inductance, and is well suited for mixing Circuit. Nanjing Institute of Electronic Devices in the single-tube beam mixing lead wire on the basis of the development of the inverse parallel structure and T-beam