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一、引言铝膜光刻质量的好坏直接影响着集成电路的成品率和可靠性。目前铝光刻通常采用酸或碱溶液化学腐蚀法。在磷酸化学腐蚀法中,由于所产生的氢气附在铝膜的表面,因而妨碍了继续腐蚀,可能造成互连引线间的短路使电路失效;同时腐蚀终点较难准确判断,容易造成腐蚀过头,不利于窄条光刻。用氢氧化钠加铁氰化钾溶液腐蚀铝膜的方法克服了上述磷酸腐蚀的缺点,虽利于窄条光刻,但却引入钠钾离子可能会污染器件。此外,当铝膜较厚时,这种腐蚀液对光刻胶的浸蚀也不能忽视。为了克服上述缺点提出了电解腐蚀法,我们经过一个阶段的试验,现将初步结果总结如下。
I. Introduction The quality of aluminum film lithography directly affects the yield and reliability of integrated circuits. Aluminum lithography is currently used acid or alkali solution chemical etching. In the phosphoric acid chemical etching method, the generated hydrogen gas adheres to the surface of the aluminum film, thereby preventing continuous corrosion and possibly short circuiting the interconnection leads to failure of the circuit. At the same time, it is difficult to accurately judge the end point of corrosion and easily cause excessive corrosion. Is not conducive to narrow strip lithography. The method of etching the aluminum film with sodium hydroxide and potassium ferricyanide solution overcomes the shortcomings of the above-mentioned phosphoric acid etching. Although it is beneficial for narrow-band lithography, the introduction of sodium and potassium ions may pollute the device. In addition, when the aluminum film is thick, the etching solution can not ignore the photoresist. In order to overcome the above shortcomings proposed electrolytic corrosion method, we have to go through a phase of the test, the preliminary results are summarized below.