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简要介绍了纳米晶硅薄膜的微结构表征方法,重点讨论了PECVD制备方法中工艺参数对薄膜结构的影响,并探讨了氢在薄膜形成和生长中的作用。通过优化氢稀释率、衬底温度、反应气压、激励功率和激发频率等工艺参数可提高纳米晶硅薄膜的晶化率并改善薄膜质量。结合喇曼光谱、X射线衍射谱、傅里叶红外光谱和高分辨透射电镜等表征方法可深入研究薄膜形成机理,对进一步探索薄膜光电特性有重要意义。分析了等离子体化学气相沉积(PECVD)制备方法中各工艺参数对薄膜质量和沉积速率的影响,指出其存在的问题,并探寻了今后的研究方向。
The microstructure characterization of nanocrystalline silicon thin films is briefly introduced. The influence of process parameters on the structure of thin films is mainly discussed. The effect of hydrogen on the formation and growth of thin films is also discussed. By optimizing the parameters of hydrogen dilution rate, substrate temperature, reaction pressure, excitation power and excitation frequency, the crystallization rate of nanocrystalline silicon thin films can be improved and the film quality can be improved. Combined with Raman spectroscopy, X-ray diffraction, Fourier transform infrared spectroscopy and high-resolution transmission electron microscopy and other characterization methods in-depth study of the film formation mechanism, to further explore the photoelectric properties of thin films of great significance. The effects of various process parameters on the film quality and deposition rate in PECVD were analyzed. The existing problems were pointed out and the future research directions were also discussed.