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采用Nd:YVO4晶体带内抽运波长914nm,降低激光二极管(LD)连续抽运时晶体的热负荷和端面热应力,提高高重复频率Nd:YVO4皮秒再生放大器输出性能。研究分析了普克尔盒加压脉宽对工作频率为100kHz的Nd:YVO4再生放大器输出脉冲稳定性的影响,在吸收914nm抽运功率为68W,通过控制普克尔盒加压脉宽,实现了对单脉冲能量为1nJ、脉宽为5.7ps、频率为42.7MHz的全固态Nd:YVO4半导体可饱和吸收镜(SESAM)锁模种子激光脉冲的稳定的100kHz皮秒激光再生放大,输出平均功率为21.2W。
The Nd: YVO4 Nd: YVO4 picosecond regeneration amplifier output performance is improved by using 914nm band-dumped Nd: YVO4 crystal to reduce the heat load and thermal stress of the crystal during the continuous pumping of the laser diode (LD). The effect of Pockels’ pressure pulse width on the output pulse stability of Nd: YVO4 regenerative amplifier with 100kHz operating frequency was investigated. The pumping power at 914nm was 68W. By controlling the pulse width of Pockels cell, A stable 100kHz picosecond laser regenerative amplification of an all-solid-state Nd: YVO4 semiconductor saturable absorption mirror (SESAM) mode-locked seed laser pulse with a single pulse energy of 1nJ, a pulse width of 5.7ps and a frequency of 42.7MHz was used to output the average power 21.2W.