1962年首只红色发光二极管GaAsP问世以来,40年间发光二极管(LED)得到了飞速的发展。1985年人们用GaAIAs制成的LED的发光强度第一次突破lcd。进入90年代以来,人们对LED的开发研究取得了突破性的进展。通过利用金属有机化学气相沉积(MOCVD)方法替代了繁杂的液相法,通过开展InGaAIP四元素材料的研究,制成了高亮度黄光和黄绿光。同样采用MOCVD方法,以氮化物为代 In 1962 the first red light-emitting diode GaAsP since the advent of the 40-year light-emitting diode (LED) has been rapid development. In 1985, the luminous intensity of LEDs made of GaAIAs exceeded the lcd for the first time. Since entering the 90’s, people have made breakthrough progress in LED research and development. Through the use of MOCVD instead of the complicated liquid phase method, high-brightness yellow and yellow-green light were produced through the research on the four-element InGaAIP materials. The same method using MOCVD to nitride instead