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介绍了利用在MgO衬底上生长NdBa2Cu3Oy(Nd123)薄膜从而诱导生长GdBa2Cu3Oy(Gd123)超导单畴块材的工艺,并在此基础上研究了使用MgO缓冲层诱导生长钆钡铜氧单畴块材的工艺。通过调整热处理参数和缓冲层中Gd2BaCuO5(Gd211)相的含量,克服了MgO与Gd123母体的晶格失配和低反应率的问题。成功制备了Gd123单畴块材,研究了铁镍软磁合金粒子在超导块材中的掺杂作用。结果表明,0.4%(摩尔分数)为最优掺杂比例,超导临界电流在低场和中场下得到了很大的提升,对工业应用有重要意义。超导电流的提升主要源于铁、镍离子对铜位的替代,并提供了额外的磁通钉扎。
The technology of growing GdBa2Cu3Oy (Gd123) superconducting single-domain block by growth of NdBa2Cu3Oy (Nd123) thin film on MgO substrate is introduced. Based on the above, the growth of Gd-BaO2 single-domain block Material technology. By adjusting the parameters of heat treatment and the content of Gd2BaCuO5 (Gd211) phase in the buffer layer, the lattice mismatch and low reaction rate of MgO and Gd123 were overcome. The single-domain Gd123 bulk material was successfully prepared and the doping effect of the iron-nickel soft magnetic alloy particles in the superconducting bulk material was studied. The results show that 0.4% (mole fraction) is the optimal doping ratio, and the critical current of superconductivity has been greatly improved in low field and mid field, which is of great significance for industrial application. Superconducting current enhancement is mainly due to iron, nickel ions on the replacement of copper, and provides additional flux pinning.