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采用三维数值模拟的方法对比研究了单个NMOS晶体管和反相器链中的单粒子瞬变(single event transient,SET)电流脉冲,发现深亚微米工艺下双极放大电流在单管的SET电流脉冲中占主要成分,而在反相器链的SET模拟中不明显,分析二者的区别解释了源/体结偏压的形成过程和放大机理,并证明了双极放大效应受源/体结偏压影响的结论.在此基础上分析了NMOS管中源极的正向电流及其机理,发现台阶区的源极正向电流主要是由扩散作用形成的.
A single event transient (SET) current pulse in a single NMOS transistor and an inverter chain was contrasted by a three-dimensional numerical simulation method. It was found that the bipolar amplification current in the deep submicron process was higher than that in the single-tube SET current pulse In the SET simulation of the inverter chain is not obvious, the difference between the two explained the formation of source / body junction bias formation and amplification mechanism, and proved that the bipolar amplification effect by the source / body junction The conclusion of the influence of bias voltage.Based on the analysis of the source current in the NMOS transistor and its mechanism, it is found that the source forward current in the step region is mainly formed by diffusion.