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基于有限差分法开发了一个 Gex Si1-x合金基区异质结晶体管 (Gex Si1-x HBT)模拟器GSHBT。通过解释一组输入语句 ,GSHBT可模拟任意掺杂分布和锗分布的 Gex Si1-x HBT的直流特性、频率特性和器件的内部图像。文中描述了 GSHBT的特点和使用方法 ,阐述了进行器件特性分析的数值方法 ,并给出了应用实例。
A Gex Si1-x alloy base-region heterojunction transistor (Gex Si1-x HBT) simulator GSHBT was developed based on finite difference method. By interpreting a set of input statements, the GSHBT can simulate the DC characteristics, frequency characteristics, and internal images of the device for Gex Si1-x HBT with any doping and Ge distribution. In this paper, the characteristics and usage of GSHBT are described. The numerical method for analyzing the characteristics of the device is described. The application examples are also given.