本文研究了SiO_2掩蔽膜硼离子注入硅的卤钨灯辐照快速退火,测量了注入层表面薄层电阻与退火温度及退火时间的关系,得到了最佳的退火条件。对于采用920(?)SiO_2膜,25keV、1×10~(15)cm~(-2)的~(11)B离子注入样品,经不同时间卤钨灯辐照退火后,测量了注入层的载流子浓度分布,并与950℃、30分钟常规炉退火作了比较。结果表明,卤钨灯辐照快速退火具有电激活率高、注入杂质再分布小以及快速、实用等优点。 In this paper, the rapid annealing of tungsten halogen lamp implanted with Si ion implanted Si into SiO_2 masking film was studied. The relationship between the sheet resistance on the surface of the implanted layer and the annealing temperature and annealing time was measured. The optimum annealing conditions were obtained. For the (11) B ion implanted samples with 920 (?) SiO_2 film, 25keV, 1 × 10 ~ (15) cm ~ (-2) ions and irradiated by halogen lamps for different time, Carrier concentration distribution and compared with 950 ℃, 30 minutes conventional furnace annealing. The results show that the rapid annealing of tungsten halogen lamps has the advantages of high electrical activation rate, small redistribution of implanted impurities and rapid and practical application.