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大功率InGaN/GaN多量子阱蓝光发光二极管在大注入电流下,载流子泄漏而引起的效率下降问题是目前限制大功率发光二极管光电特性及其应用的突出问题。本文通过在p型GaN和InGaN/GaN多量子阱(MQW)有源区之间插入p型AlGaN/GaN多量子势垒(MQB)电子阻挡层,利用多量子势垒对电子的量子反射作用,有效地解决了大注入下载流子泄漏问题。与未使用多量子势垒电子阻挡层的样品相比,MQB样品的光功率和外量子效率分别提高了约80%和100%。
High power InGaN / GaN multiple quantum well blue light-emitting diodes in the large injection current, the carrier leakage caused by the efficiency of the problem is to limit the high-power light-emitting diode optoelectronic properties and its outstanding application of outstanding issues. In this paper, a p-type AlGaN / GaN multiple quantum barrier (MQB) electron blocking layer is inserted between the p-type GaN and the InGaN / GaN multiple quantum well (MQW) active region to make use of the quantum- It effectively solves the problem of carrier leakage under large injection. The optical and external quantum efficiencies of the MQB samples increased by about 80% and 100%, respectively, compared to those without the multi-quantum barrier barrier.