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随着高科技产业和微电子信息产业的飞速发展,大规模、超大规模集成电路等已广泛应用于电子,通讯、航空、航天、军工乃至于人们日常生活中。静电的危害及干扰在各个领域越来越引起人们的关切,静电造成的损失日益受到各方面的重视。根据航天总公司半导体器件失效分析中心在1997年对全部失效器件所作的分析,其中因静电过应力(EOS)和静电放电损伤(ESD)而造成失效的器件占
With the rapid development of high-tech industries and microelectronics information industries, large-scale, ultra-large-scale integrated circuits have been widely used in electronics, communications, aviation, aerospace, military, and even people’s daily lives. The harm and interference of static electricity have aroused people’s concerns in various fields, and the damage caused by static electricity has been increasingly valued by various parties. According to the analysis of all failed devices in 1997 by the Analytical Center for Semiconductor Device Failure Analysis of Aerospace Corporation, devices that failed due to electrostatic overstress (EOS) and electrostatic discharge damage (ESD) accounted for