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为了进一步提高氢化非晶硅薄膜晶体管(a-Si:HTFT)的场效应电子迁移率,研究了批量生产条件下对欧姆接触层和栅极绝缘层进行多层制备,不同的工艺参数对a-Si:HTFT场效应电子迁移率的影响.研究表明随着对欧姆接触层(n+层)分层数的增加,以及低速生长的栅极绝缘层(GL层)和高速生长的栅极绝缘层(GH层)厚度比值提高,a-Si:HTFT的场效应迁移率得到提升.当n+层分层数达到3层,GL层和GH层厚度比值为4:11时,器件的场效应电子迁移率达到0.66cm2/V.s,比传统工艺提高了约一倍,显著改善了a-Si:HTFT的电学特性,并在量产线上得到了验证.
In order to further improve the field-effect electron mobility of hydrogenated amorphous silicon thin film transistor (a-Si: HTFT), the ohmic contact layer and the gate insulating layer are prepared in multiple layers under the conditions of mass production. The effects of different process parameters on a- Si: HTFT.The results show that with the increase of the number of layers of ohmic contact layer (n + layer), as well as the growth of low-growth gate insulating layer (GL layer) and high-growth gate insulating layer ( GH layer), the field-effect mobility of a-Si: HTFT is improved.When the number of n + layers reaches 3 layers and the ratio of the thickness of GL layer to GH layer is 4: 11, the field effect electron mobility Reached 0.66cm2 / Vs, doubling the traditional process, which significantly improved the electrical characteristics of a-Si: HTFT and was verified on the production line.