研究了外延PbS p-n结构的电和光电性能。外延层中结的平面垂直于薄层面。指出,有可能利用如光电二极管类似结构制造小响应时间的红外探测器。提出,p-n结和光敏多晶薄膜的暗特性(伏-安特性和电阻随温度的变化)基本一致。证实了,多晶薄膜经敏化便形成p-n结势垒。 The electrical and optoelectronic properties of epitaxial PbS p-n structures were investigated. The plane of the junction in the epitaxial layer is perpendicular to the plane of the sheet. It is pointed out that it is possible to make use of infrared detectors of small response time such as photodiode-like structures. It is proposed that the dark characteristics (V-An characteristics and resistance with temperature) of the p-n junction and the photosensitive polycrystalline thin film are basically the same. Confirmed, the polycrystalline film sensitized to form a p-n junction barrier.