将带有ＴｉＮ、Ｍｏ和Ｗ阻挡层的Ａｕ金属化系统用在高频功率管上，对其ＥＢ结进行了高温大电流应力试验。结果表明采用ＴｉＮ作阻挡层的器件寿命比用Ｗ作阻挡层的器件提高了２．２倍，比用Ｍｏ作阻挡层的器件提高了１．３倍。ＳＥＭ和ＴＥＭ观察表明，用Ｔｉ／ＴｉＮ／Ｐｔ／Ａｕ作金属化的产品的失效是由金属化的横向电迁徙导致的开路引起的，ｘ射线分析结果表明Ａｕ没有穿过ＴｉＮ进入Ｓｉ衬底，ＴｉＮ起到了良好的阻挡层效果 The Au metallization system with TiN, Mo and W barriers was used on the high frequency power tube to test its EB junction under high temperature and high current stress. The results show that the lifetime of devices using TiN as a barrier is increased by 2.2 times compared with the device with W as a barrier, 1.3 times more than the device with Mo as a barrier. SEM and TEM observations showed that the failure of the metalized product with Ti / TiN / Pt / Au was caused by the open circuit caused by the lateral electromigration of metallization. The results of x-ray analysis showed that Au did not penetrate the TiN into the Si substrate, TiN has played a good barrier effect