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室温下在单晶Si中注入 (0 6— 1 5 )at%的C原子 ,部分样品在C离子注入之前在其中注入2 9Si+ 离子产生损伤 ,然后在相同条件下利用高温退火固相外延了Si1 -xCx 合金 ,研究了预注入对Si1 -xCx 合金形成的影响 .如果注入C离子的剂量小于引起Si非晶化的剂量 ,在 95 0℃退火过程中注入产生的损伤缺陷容易与C原子结合形成缺陷团簇 ,难于形成Si1 -xCx 合金 ,预注入形成的损伤有利于合金的形成 .随着C离子剂量的增大 ,注入产生的损伤增强 ,预注入反而不利于Si1 -xCx 合金的形成 ,但当注入C原子的浓度超过固相外延的溶解度时 ,预注入的影响可以忽略 .退火温度升高到 10 5 0℃ ,无论预注入还是未预注入样品 ,C含量低的合金相仍然保留 ,而C含量高的合金相大部分消失 .
At room temperature, (0 6 1 5) at% C atoms were implanted into single crystal Si. Some of the samples were implanted with 29Si + ions before the C ions were implanted, and then the Si1 -xCx alloy, the effect of pre-implantation on the formation of Si1-xCx alloys has been investigated.If the dose of C ions implanted is less than the dose that causes Si amorphization, the damage defects caused by the implantation during 95 0 ℃ annealing easily combine with C atoms Defective clusters, Si1-xCx alloy is difficult to form, pre-implantation damage is conducive to the formation of alloy.With the increase of C dose, the damage caused by the injection enhancement, pre-injection is not conducive to the formation of Si1-xCx alloy, but The effect of pre-implantation is negligible when the concentration of C atoms injected exceeds the solubility of the solid-state epitaxy.The annealing temperature increases to 10500C, and the alloy phase with low C content remains, regardless of whether the sample is pre-injected or not pre- Most of the alloy phase C disappeared.