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用分子束外延的方法在ＧａＡｓ（２１１）Ｂ衬底上研制了Ｐ型长波ＨｇＣｄＴｅ材料，及３２×３２小规模长波混成红外焦平面列阵，其材料的均匀性以及生长材料的参数的可重复性良好．在适当的热处理条件下，材料Ｐ型电学参数达到了较高水平，并具有良好的可重复性
The P-type long-wavelength HgCdTe material and the 32 × 32 long-wavelength hybrid infrared focal plane array have been fabricated on GaAs (211) B substrate by molecular beam epitaxy. The uniformity of the material and the repeatability of the parameters of the growth material Good sex. Under appropriate heat treatment conditions, the material P-type electrical parameters to achieve a high level, and has good repeatability