一、引言对于任何一项发展中的微细加工技术,如果要付诸实用,不但它要有高的分辨本领和合算的经济效益,而且还要解决与其作图精度相适应的自动对准的技术问题。对于微米或亚微米线宽图形的光刻技术,要求图形的对准精度必须优于0.25微米。在扫描电子束曝光系统中,检测反射电子,可以最有效地测定涂有抗蚀剂的衬底表面上定位标记的位置。 I. Introduction For any developing microfabrication technology, if it is to be put into practical use, it not only has high resolving power and cost-effective economic benefits, but also solves the technology of automatic alignment that suits its mapping precision problem. For lithography techniques with line widths of micrometers or sub-micrometers, the alignment accuracy of the pattern must be better than 0.25 micrometer. In a scanning electron beam exposure system, the reflected electrons are detected and the position of the alignment mark on the resist coated substrate surface can be most efficiently determined.