论文部分内容阅读
用射频共溅射方法和退火工艺制备厂埋入 SiO_2中碳的复合薄膜,并在室温下得到了强的可见光致发光谱(峰值在2.136eV)。用拉曼散射谱和红外透射谱对样品进行了测量,分析厂复合膜的微结构,研究了不同碳含量对光致发光谱的影响,并对 C-SiO_2复合薄膜的光致发光机理进行了讨论。
The films were embedded in SiO_2 by radio frequency co-sputtering method and annealing process, and strong visible photoluminescence spectra (peak at 2.136eV) were obtained at room temperature. The samples were measured by Raman scattering spectrum and infrared transmission spectrum. The microstructure of the composite films was analyzed. The effects of different carbon contents on the photoluminescence spectra were studied. The photoluminescence mechanism of C-SiO 2 films was also studied discuss.