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本文对微波小功率GaAs场效应晶体管的静电失效机理进行了分析.文中对两种静电失效模式(电压型强电场失效和功率型大电流失效)分别进行了分析和阐述.针对GaAs场效应晶体管的失效机理提出了改进措施.
In this paper, the electrostatic failure mechanism of microwave low-power GaAs field-effect transistors is analyzed.In this paper, two kinds of electrostatic failure modes (voltage-type high-field failure and power-type high-current failure) are respectively analyzed and described.For GaAs field-effect transistor Failure mechanism proposed improvements.