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采用Te~+离子注入使N型Pb_(1-x)Sn_xTe转变成P型层。Te~+离子浓度大于1×10~(15)/厘米~2,并经适当的后退火处理在N型Pb_(1-x)Sn_xTe表面上产生大约1微米厚P型层。近年来,曾采用离子注入在Pb_(1-x)Sn_xTe晶体中制备P-N结,晶体的类型转变是由于用离子注入(如同化学掺杂)引进外来的原子或因注入产生的晶格缺陷造成的。在本文中,我们报导通过基质原子Te的注入控制化学计算的偏差使N型Pb_(1-x)Sn_xTe晶体类型转变。为了减少因注入而产生的晶格缺陷(贡献出N型电导)还需要适当的后退火。
The n-type Pb_ (1-x) Sn_xTe is transformed into a p-type layer by Te ~ + ion implantation. The Te ~ + ion concentration is more than 1 × 10 ~ (15) / cm ~ 2, and a p-type layer about 1 μm thick is formed on the surface of n-type Pb_ (1-x) Sn_xTe via appropriate post-annealing treatment. In recent years, PN junction has been fabricated in Pb_ (1-x) Sn_xTe crystal by ion implantation. The crystal transition is due to the introduction of foreign atoms by ion implantation (like chemical doping) or lattice defects due to implantation . In this paper, we report the transformation of the N-type Pb 1-x Sn x Te crystal type by controlling the stoichiometry of the implantation of the matrix atoms Te. In order to reduce lattice defects due to implantation (contributing to N-type conductivity), proper post-annealing is also required.