本文利用多离子束反应共溅射装置，分别在Ｓｉ和ＭｇＯ衬底上原位制备了ＰｂＴｉ氧化物薄膜。研究表明，利用多离子束反应共溅射技术，可以显著降低薄膜后续热处理的温度；薄膜中焦绿石结构的消失温度与薄膜中Ｐｂ的含量有关；较之Ｓｉ衬底，在ＭｇＯ衬底上的薄膜较易获得好的晶体结构和优良的薄膜表面形貌。对所观察到的现象，从衬底与薄膜相互作用的角度进行了讨论 In this paper, multi-ion beam co-sputtering device, respectively, in Si and MgO substrate prepared in situ Pb  Ti oxide film. The results show that the multi-ion beam co-sputtering technology can significantly reduce the temperature of the subsequent heat treatment of the film; the disappearance temperature of the pyrochlore structure in the film is related to the content of Pb in the film; compared with the Si substrate, the film on the MgO substrate Easier to get good crystal structure and excellent film surface morphology. The observed phenomena are discussed in terms of the interaction of the substrate with the film