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作为半导体器件和电子部件的微型图形形成技术,剥离法受到越来越多的注意。日本电信电话公司武芷野电气通信研究所提出了一种改进的新剥离法,这种方法克服了目前的剥离法金属图形不够厚的缺点。目前,集成电路等的图形间隔一般约为5微米,特殊器件约为2微米。但将来,可以预见,必须形成突破1微米的亚微米图形。这种新剥离法就是为适应这种要求而研究的。武芷野电气通信研究所,成功地实现了厚度大于1微米(包括电镀层厚度)、间隔
As a micro-patterning technique for semiconductor devices and electronic parts, peel-off methods are attracting more and more attention. The Nippon Telegraph and Telephone Corporation, Ozaki Electric Research Institute of Communications, proposed an improved new stripping method that overcomes the shortcomings of the current stripping method in which the metal pattern is not thick enough. At present, the pattern spacing of integrated circuits and the like is generally about 5 micrometers and the special device is about 2 micrometers. In the future, however, it is foreseeable that submicron patterns that break through 1 micron must be formed. This new law of separation is to adapt to such requirements and research. Wuzhi Ye Electric Communication Institute, the successful realization of the thickness of more than 1 micron (including plating thickness), the interval