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采用原子层沉积(ALD)方法,分别以VO(OC3H7)3和H2O2为钒源和氧源,在载玻片基底上沉积钒氧化物薄膜;在还原气氛的管式炉中,对钒氧化物薄膜进行还原退火结晶,进而得到VO2薄膜晶体。通过扫描电镜(SEM)、X-射线衍射(XRD)及X-射线光电子能谱(XPS)研究所制备的钒氧化物薄膜表面形貌、晶体结构以及组分的变化;利用傅里叶红外光谱(FT-IR)对VO2薄膜的红外透射性进行测试分析。结果表明:ALD所制备的薄膜以非晶态V2O5、VO2和V2O3为主;在通以还原气氛(95%Ar,5%H2)并500℃热处理2h后得到以(011)择优取向的单斜金红石纳米VO2薄膜,VO2晶体薄膜相变前后红外透过率突变量较大。
Vanadium oxide films were deposited on the glass substrate by atomic layer deposition (ALD) method using VO (OC3H7) 3 and H2O2 as the vanadium source and oxygen source respectively. In a reducing atmosphere tube furnace, vanadium oxide The film is subjected to reduction annealing crystallization to obtain VO2 thin film crystal. The surface morphology, crystal structure and composition of the prepared vanadium oxide films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Fourier transform infrared spectroscopy (FT-IR) on the VO2 thin film infrared transmission test. The results show that the films prepared by ALD are dominated by amorphous V2O5, VO2 and V2O3. After monocrystalline oxide (95% Ar, 5% H2) and heat treatment at 500 ℃ for 2h, Rutile nano VO2 thin film, VO2 crystal thin film before and after the change of the infrared transmittance greater.