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研究了低压和常压多晶硅膜的氧化并和单晶硅氧化作了比较·样品或者未掺杂或者利用PoCe_3作源气相预淀积掺磷·对于一种掺杂,使用的氧化条件范围较宽,当表面反应速率控制时的氧化,其所用膜的掺杂剂浓度范围比较宽。低压和常压多晶硅膜氧化速率大致相同,而和同样预淀积条件下掺杂的单晶硅有显著的差别·中等掺杂的多晶硅膜似乎由多晶硅膜表面电活性载流子浓度所控制·开始氧化时载流子浓度特别重要,氧化期间堆积在表面的掺杂剂不受控制的结果。单晶硅和多晶硅样品之间氧化速率的明显差别是与两种材料中掺杂原子扩散系数不同有关,并与多晶硅下面存在氧化层有关。重掺杂样品可以找到氧化速率的上限（upper limit）样品的重掺杂大约对应于为膜中掺杂剂固溶度的载流子浓度·轻掺杂多晶硅氧化速率在（111）和（100）单晶硅之间,低压材料氧化稍微快一点,提出多晶硅膜晶向控制的范围,氧化期间,发现所消耗多晶硅对所生长氧化膜的比率为O.43,接近所用单晶硅的数值。
Oxidation of low-pressure and atmospheric polysilicon films was studied and compared with monocrystalline silicon oxidation. Samples were either undoped or doped with PoCe_3 for source-gas-phase pre-doping. For a doping, a wide range of oxidation conditions were used , When the surface reaction rate control of oxidation, the film used in the dopant concentration range is relatively wide. The rates of oxidation of low-pressure and ambient-pressure polysilicon films are about the same, but significantly different from the monocrystalline silicon doped under the same pre-deposition conditions. The moderately doped polysilicon film appears to be dominated by the electroactive carrier concentration on the surface of the polysilicon film. The carrier concentration is particularly important at the beginning of oxidation, as a result of the uncontrolled deposition of dopants on the surface during oxidation. The significant difference in oxidation rates between the monocrystalline and polycrystalline samples is related to the different diffusion coefficients of the dopant atoms in the two materials, and is related to the presence of oxide beneath the polycrystalline silicon. Heavy doping samples can find the upper limit of the oxidation rate. The heavy doping of the samples corresponds approximately to the carrier concentration of the doping agent in the film. The lightly doped polycrystalline silicon has oxidation rates between (111) and (100 During the oxidation period, the ratio of consumed polysilicon to the grown oxide film was found to be O.43, close to the value of single crystal silicon used.