微波集成电路的封装要受到多方面因素的约束。它要求损耗低、介电常数高,也就是射频性能要好。这些特点则往往是机械方面困难的来源。大功率的电路尤其是这样。而且,衬底的厚度在尺寸上与按装在外壳上的实用的最小的射频接头有明显的差别,进一步约束了外壳或盒子的设计及其尺寸上的公差。衬底的金属化工艺,无论是电路图形的限定还是接地面通常都可以采用真空淀积薄膜或掩模印刷厚膜材料的方法。薄膜技术可以淀积包括铜在内的许多种金属,而厚膜技术却要受到限制。就微波应用而言,主要用不含玻璃质的金,除非在专门的还原性烧结 Microwave IC packaging to be subject to many factors. It requires low loss, high dielectric constant, which is better RF performance. These characteristics are often a source of mechanical difficulties. This is especially true for high-power circuits. Moreover, the thickness of the substrate is significantly different in size from the practical minimum RF connector mounted on the housing, further constraining the design of the housing or box and its dimensional tolerances. Substrate metallization processes, whether circuit patterning or grounding, are often used to vacuum deposit films or masks for thick film materials. Thin-film technology can deposit many metals, including copper, while thick-film technology is limited. For microwave applications, the main use of vitrified gold, unless the special reductive sintering