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用溶胶-凝胶法制备了Eu3+离子掺杂的TiO2-SiO2复合薄膜并研究了退火温度对复合薄膜的光致发光的影响。并采用XRD、Raman和光致发光谱对其进行了一系列的表征。在退火温度为700℃的时候,Eu3+离子引起的发光强度是最强的,而随着退火温度的升高由TiO2本身的Ti3+离子缺陷能级引起的在近红外820nm处的发光峰的强度变得越来越强,一方面是因为随着退火温度的升高Ti3+离子增多,即缺陷能级数量增多,另一方面是Eu3+离子的能量背传递给Ti3+离子缺陷能级,这两个原因导致820nm处的发光峰强度随退火温度而增强。
The Eu3 + ion-doped TiO2-SiO2 composite films were prepared by sol-gel method and the effects of annealing temperature on the photoluminescence of the composite films were investigated. A series of characterizations were carried out by XRD, Raman and photoluminescence spectra. When the annealing temperature is 700 ℃, the emission intensity of Eu3 + ion is the strongest, while the intensity of the emission peak at 820 nm in the near infrared due to the Ti3 + ion defect level of TiO2 itself increases with the increase of annealing temperature On the one hand because Ti3 + ions increase with increasing annealing temperature, that is, the number of defect levels increases, on the other hand, the energy back of the Eu3 + ions is passed to the Ti3 + ion defect level for two reasons The emission peak intensity at 820 nm increases with the annealing temperature.