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采用脉冲激光淀积 (PL D)技术 ,利用 Zn O作为缓冲层 ,在 Si(10 0 )衬底上生长出 Al N薄膜。X-射线衍射图谱表明 ,该 Al N薄膜具有 c轴取向特性。X-光电子能谱测试表明 ,要获得接近理想化学配比的 Al N薄膜 ,需要高真空淀积气氛或合适的 N2 气氛 ;同时还表明 ,Al N薄膜表面容易形成保护性氧化层。剖面透射电子显微镜显微照相显示该 Al N/ Zn O/ Si(10 0 )多层结构清晰可辨 ,层与层之间的界面非常平整。原子力显微镜分析表明 ,采用 Zn O缓冲层可改善 Al N薄膜的表面粗糙度 (RMS=1nm)
AlN thin films were grown on Si (100) substrates by pulsed laser deposition (PLD) using Zn O as a buffer layer. The X-ray diffraction pattern shows that the AlN film has a c-axis orientation characteristic. X-ray photoelectron spectroscopy (XPS) showed that a high vacuum deposition atmosphere or a suitable N2 atmosphere was required to obtain an Al N thin film close to the ideal stoichiometry and that a protective oxide layer was easily formed on the surface of the Al N thin film. Transmission electron microscope micrographs show that the Al N / Zn O / Si (100) multilayer structure is clearly visible and the interface between the layers is very flat. Atomic force microscopy analysis showed that Zn O buffer layer can improve the surface roughness of Al N thin film (RMS = 1nm)