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超晶格器件(Super Lattice)不是用天然材料制作的,而是用新的人工超晶格材料作成的器件。它是一种新的功能器件。随着半导体技术的迅速发展,可高精度地制作半导体超薄膜和多层结构。1955年Schrieffer预言电子限制在这种超薄膜中可产生异常性质;1966年Fowler等人发现了在甚低温状态下工作的Si—MOS—FET中电子的驻波状态;60年代后期制成了半导体异质结;1970年江崎等人实现了厚度与电子波长相当的超晶格结构。超晶格结构的形状图示于图1。以后用异质结
Super Lattice is not made of natural materials, but made of new artificial superlattice materials. It is a new feature device. With the rapid development of semiconductor technology, ultra-thin semiconductor films and multilayer structures can be fabricated with high precision. 1955 Schrieffer predicts that electron confinement can produce unusual properties in this ultra-thin film; Fowler et al. Found the standing state of electrons in Si-MOS-FETs operating at very low temperatures in 1966; semiconductors were made in the late 1960s Heterojunction; In 1970, Ezaki et al. Achieved a superlattice structure with the same thickness and electron wavelength. The shape of the superlattice structure is shown in Figure 1. After heterogeneous knot