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在绝缘衬底上生长单晶硅薄膜,即SOI技术,是近年发展起来研制三维集成电路的一项新技术。本文讨论了利用扫描电子束对淀积在SiO_2上的多晶硅薄膜进行改性的实验。采用籽晶液相外延形成单晶硅薄膜。本实验的重点在于摸索电子束的功率密度、扫描速度、衬底的温度和样品结构等因素对形成单晶硅薄膜质量的影响。实验取得了较好的结果,获得了200×25μm~2的单晶区。
The growth of monocrystalline silicon thin film on an insulating substrate, or SOI technology, is a new technology developed in recent years to develop three-dimensional integrated circuits. This paper discusses the experiment of modifying polycrystalline silicon films deposited on SiO_2 by scanning electron beam. Single crystal silicon thin film is formed by seed liquid phase epitaxy. The focus of this experiment is to explore the influence of electron beam power density, scanning speed, substrate temperature and sample structure on the quality of single crystal silicon film. Experiments have achieved good results, obtained 200 × 25μm ~ 2 single crystal region.