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通过对电镀液中加入适当的整平剂和采用三步电流法 ,成功地将工业镀铜技术应用于 UL SI铜互连线技术中 ,实现了对高宽比为 1μm∶ 0 .6 μm的刻孔的无空洞、无裂缝填充 .方阻测试表明 ,所镀铜膜的电阻率为2 .0 μΩ· cm,X射线衍射分析结果显示出的 Cu(111)的致密结构非常有利于互连线技术中高抗电迁移性要求
By applying appropriate leveler and three-step current method to the electroplating solution, the industrial copper plating technology is successfully applied to the UL SI copper interconnection technology, and the high-aspect ratio of 1 μm: 0.6 μm No holes were filled in the holes, and no cracks were filled in. The square resistance test showed that the resistivity of the plated copper film was 2.0 μΩ · cm. The X-ray diffraction analysis showed that the dense structure of Cu (111) High resistance to electromigration in wire technology