在亚微米工艺水平阶段,动态功耗占IC总功耗的比重较大,但随着工艺尺寸不断减小,深亚微米制造工艺正在逐步成熟并被广泛采用,这使得静态功耗,特别是待机功耗在IC总功耗中的比例逐渐增大,同时漏电流也在随之增大。这就需要在提升IC的工作速度和降低功耗之间进行权衡。面对上述挑 At the submicron process level, the dynamic power consumption accounts for a large portion of the total IC power consumption, but as the process size continues to decrease, the deep submicron manufacturing process is maturing and widely adopted, making static power consumption, especially Standby power consumption in the proportion of the total power consumption of IC gradually increased, while the leakage current is also increasing. This requires a trade-off between increasing IC speed and reducing power consumption. Faced with the above pick