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为了有效消除器件的逆阻现象,提出了一种带有p型柱体的三维阳极短路横向绝缘栅双极型晶体管(SA-LIGBT)结构。p型柱体位于n型缓冲层中,提高了集电极区域的短路电阻,从而使逆阻现象完全消失。另一方面,p型柱体会向漂移区注入更多的空穴,可以增强通态条件下器件的电导调制效应,降低器件的通态压降。利用三维仿真软件Crosslight-APSYS仿真研究了p型柱体的高度、宽度和长度对逆阻现象以及对器件通态压降和关断速度的影响。结果表明,当p型柱体的高度为1μm,宽度为12μm,长度为20μm时,器件的逆阻现象完全消失。通态压降为1.61 V,关断时间为110.3 ns,而传统结构LIGBT的通态压降为1.56 V,关断时间为2.33μs。
In order to eliminate the phenomenon of reverse resistance effectively, a three-dimensional anode short-circuit lateral insulated gate bipolar transistor (SA-LIGBT) structure with a p-type pillar is proposed. The p-type pillars are located in the n-type buffer layer, increasing the short-circuit resistance of the collector region so that the reverse-blocking phenomenon disappears completely. On the other hand, the p-type pillars will inject more holes into the drift region, which can enhance the conductance modulation effect of the device under the on-state condition and reduce the on-state voltage drop of the device. Crosslight-APSYS simulation software was used to study the effect of p-type column height, width and length on the reverse resistance phenomenon and on-state voltage drop and turn-off speed. The results show that when the height of the p-type pillars is 1μm, the width is 12μm and the length is 20μm, the phenomenon of reverse resistance of the device completely disappears. The on-state voltage drop is 1.61 V with a turn-off time of 110.3 ns, compared to a drop of 1.56 V for the LIGBT with a turn-off time of 2.33 μs.