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使用热丝化学气相沉积技术制备微晶硅薄膜(沉积速度为1.2nm/s),通过原子力显微镜研究了薄膜前期生长的粗糙化过程.按照标度理论获得微晶硅薄膜的生长因子为β≈0.67,粗糙度因子为α≈0.80,动力学因子为1/z=0.40.这些标度指数不能用一般的生长模型来解释.通过蒙特卡罗模拟给出与实验一致的结果.模拟表明,入射流方向、生长基元的类型和浓度、生长基元的粘滞、再发射和影蔽过程都对微晶硅薄膜的表面形貌有比较重要的影响.
The microcrystalline silicon thin film (deposition rate of 1.2nm / s) was prepared by hot wire chemical vapor deposition technique and the pre-growth roughening process was studied by atomic force microscopy.The growth factor of the microcrystalline silicon thin film was β≈ 0.67, the roughness factor is α≈0.80, and the kinetic factor is 1 / z = 0.40.The scale indices can not be explained by the general growth model.The results of the experiment are consistent with the Monte Carlo simulation.The simulation shows that the incident The flow direction, the type and concentration of growth elements, the growth of the cell’s viscous, re-emission and shadowing process all have a more important influence on the surface morphology of microcrystalline silicon thin films.