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在汞等离子体装置中进行三极溅射制成了红外(Hg,Cd)Te光电二极管探测器。采用共溅射技术,用加偏压的金属(金或铝)辅助靶,形成了p型和n型材料。用此法制得了2～14微米光谱区的高灵敏的异质结和同质结二极管。在10.6微米时,约2×10~(-3)厘米面积的光电二极管工作于77K时,呈现的比探测度D_λ~*(10.6,900赫,1赫)为1.5～4×10~(10)厘米·赫~(1╱2)瓦~(-1),零偏压下的电阻-面积乘积在1.2～3欧·厘米~2,外量子效率为55～60％。在10~5赫频率下测得的噪声电平约10~(-9)伏·赫~(-1╱2)。
Infrared (Hg, Cd) Te photodiode detectors were fabricated by three-pole sputtering in a mercury plasma device. Co-sputtering technology, with bias metal (gold or aluminum) to assist the target, the formation of p-type and n-type material. Using this method, a highly sensitive heterojunction and homojunction diode in the 2-14 micron spectral region have been fabricated. At 10.6μm, the photodetector with an area of about 2 × 10 ~ (-3) cm works at 77K, which is 1.5 ~ 4 × 10 ~ (10.6,900 Hz, 1 Hz) ) Cm ~ (1/2) watts ~ (-1). The product of resistance and area under zero bias is 1.2 ~ 3Ω · cm ~ 2 and the external quantum efficiency is 55 ~ 60%. The noise level measured at 10 ~ 5 Hz is about 10 ~ (-9) V · Hz ~ (-1 ╱ 2).