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2007年8月13日,Z-RAM○R高密度存储知识产权(IP)开发商InnovativeSilicon Inc(ISi)与海力士(Hynix)半导体有限公司宣布,海力士已经同意在其动态随机存储器芯片中采用ISi的Z-RAM技术。采用Z-RAM的DRAM将使用一种单晶体管位单元,来替代多个晶体管和电容器的组合。海力士已经获得
August 13, 2007 Z-RAM® R High Density Storage Intellectual property (IP) developers InnovativeSilicon Inc (ISi) and Hynix Semiconductor Ltd. (Hynix Semiconductor) announce that Hynix has agreed to adopt in its dynamic random access memory chips ISi’s Z-RAM technology. DRAMs using Z-RAM will use a single transistor bit cell to replace multiple transistor and capacitor combinations. Hynix has already won